Результаты поиска SI1422DH-T1-GE3

Найдено 3 результатов.

• MAX8727ETBTG104
  Maxim Integrated —
• SI1422DH-T1-GE3
  Vishay Intertechnology — Vishay Intertechnology SI1422DH-T1-GE3 RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 12 V Gate-Source Breakdown Voltage: 8 V Continuous Drain Current: 4 A Resistance Drain-Source RDS (on): 0.029 Ohms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-363 Fall Time: 10 ns Forward Transconductance gFS (Max / Min): 30 S Gate Charge Qg: 13.1 nC Minimum Operating Temperature: - 55 C Power Dissipation: 2.8 W Rise Time: 10 ns Typical Turn-Off Delay Time: 20 ns Part # Aliases: SI1422DH-GE3
• SI1422DH-T1-GE3
  Vishay Intertechnology — Vishay Intertechnology SI1422DH-T1-GE3 RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 12 V Gate-Source Breakdown Voltage: 8 V Continuous Drain Current: 4 A Resistance Drain-Source RDS (on): 0.029 Ohms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-363 Fall Time: 10 ns Forward Transconductance gFS (Max / Min): 30 S Gate Charge Qg: 13.1 nC Minimum Operating Temperature: - 55 C Power Dissipation: 2.8 W Rise Time: 10 ns Typical Turn-Off Delay Time: 20 ns Part # Aliases: SI1422DH-GE3