Результаты поиска SI1056X-T1-GE3

Найдено 3 результатов.

• SI1056X-T1-GE3
  Vishay Intertechnology — Vishay Intertechnology SI1056X-T1-GE3 Continuous Drain Current Id: 1.32A Current - Continuous Drain (id) @ 25?° C: - Drain Source Voltage Vds: 20V Drain To Source Voltage (vdss): 20V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 8.7nC @ 5V ID_COMPONENTS: 2662030 Input Capacitance (ciss) @ Vds: 400pF @ 10V Mounting Type: Surface Mount On Resistance Rds(on): 121mohm Package / Case: SC-89-6, SOT-563F, SOT-666 Power - Max: 236mW Rds On (max) @ Id, Vgs: 89 mOhm @ 1.32A, 4.5V Rds(on) Test Voltage Vgs: 8V Series: TrenchFET?® Threshold Voltage Vgs Typ: 950mV Transistor Polarity: N Channel Vgs(th) (max) @ Id: 950mV @ 250?µA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 20 V Gate-Source Breakdown Voltage: +/- 8 V Continuous Drain Current: 1.32 A Resistance Drain-Source RDS (on): 0.089 Ohms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Fall Time: 19 ns Minimum Operating Temperature: - 55 C Power Dissipation: 236 mW Rise Time: 19 ns Factory Pack Quantity: 3000 Typical Turn-Off Delay Time: 18 ns Part # Aliases: SI1056X-GE3 Other Names: SI1056X-T1-GE3TR
• SI1056X-T1-GE3
  Vishay Intertechnology — Vishay Intertechnology SI1056X-T1-GE3 Continuous Drain Current Id: 1.32A Current - Continuous Drain (id) @ 25?° C: - Drain Source Voltage Vds: 20V Drain To Source Voltage (vdss): 20V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 8.7nC @ 5V ID_COMPONENTS: 2662030 Input Capacitance (ciss) @ Vds: 400pF @ 10V Mounting Type: Surface Mount On Resistance Rds(on): 121mohm Package / Case: SC-89-6, SOT-563F, SOT-666 Power - Max: 236mW Rds On (max) @ Id, Vgs: 89 mOhm @ 1.32A, 4.5V Rds(on) Test Voltage Vgs: 8V Series: TrenchFET?® Threshold Voltage Vgs Typ: 950mV Transistor Polarity: N Channel Vgs(th) (max) @ Id: 950mV @ 250?µA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 20 V Gate-Source Breakdown Voltage: +/- 8 V Continuous Drain Current: 1.32 A Resistance Drain-Source RDS (on): 0.089 Ohms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Fall Time: 19 ns Minimum Operating Temperature: - 55 C Power Dissipation: 236 mW Rise Time: 19 ns Factory Pack Quantity: 3000 Typical Turn-Off Delay Time: 18 ns Part # Aliases: SI1056X-GE3 Other Names: SI1056X-T1-GE3TR
• SI1056X-T1-GE3
  Vishay Intertechnology — Vishay Intertechnology SI1056X-T1-GE3 Continuous Drain Current Id: 1.32A Current - Continuous Drain (id) @ 25?° C: - Drain Source Voltage Vds: 20V Drain To Source Voltage (vdss): 20V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 8.7nC @ 5V ID_COMPONENTS: 2662030 Input Capacitance (ciss) @ Vds: 400pF @ 10V Mounting Type: Surface Mount On Resistance Rds(on): 121mohm Package / Case: SC-89-6, SOT-563F, SOT-666 Power - Max: 236mW Rds On (max) @ Id, Vgs: 89 mOhm @ 1.32A, 4.5V Rds(on) Test Voltage Vgs: 8V Series: TrenchFET?® Threshold Voltage Vgs Typ: 950mV Transistor Polarity: N Channel Vgs(th) (max) @ Id: 950mV @ 250?µA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 20 V Gate-Source Breakdown Voltage: +/- 8 V Continuous Drain Current: 1.32 A Resistance Drain-Source RDS (on): 0.089 Ohms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Fall Time: 19 ns Minimum Operating Temperature: - 55 C Power Dissipation: 236 mW Rise Time: 19 ns Factory Pack Quantity: 3000 Typical Turn-Off Delay Time: 18 ns Part # Aliases: SI1056X-GE3 Other Names: SI1056X-T1-GE3TR