Результаты поиска SI1035X-T1-GE3
Найдено 2 результатов.
- Vishay Intertechnology — Vishay Intertechnology SI1035X-T1-GE3 Continuous Drain Current Id: 180mA Current - Continuous Drain (id) @ 25В° C: 180mA, 145mA Drain Source Voltage Vds: 20V Drain To Source Voltage (vdss): 20V Fet Feature: Logic Level Gate Fet Type: N and P-Channel Gate Charge (qg) @ Vgs: 0.75nC @ 4.5V ID_COMPONENTS: 2661539 Mounting Type: Surface Mount On Resistance Rds(on): 5ohm Package / Case: SC-89-6, SOT-563F, SOT-666 Power - Max: 250mW Rds On (max) @ Id, Vgs: 5 Ohm @ 200mA, 4.5V Rds(on) Test Voltage Vgs: 4.5V Series: TrenchFETВ® Threshold Voltage Vgs Typ: 400mV Transistor Polarity: N And P Channel Vgs(th) (max) @ Id: 400mV @ 250ВµA Other Names: SI1035X-T1-GE3TR
- Vishay Intertechnology — Vishay Intertechnology SI1035X-T1-GE3 Continuous Drain Current Id: 180mA Current - Continuous Drain (id) @ 25В° C: 180mA, 145mA Drain Source Voltage Vds: 20V Drain To Source Voltage (vdss): 20V Fet Feature: Logic Level Gate Fet Type: N and P-Channel Gate Charge (qg) @ Vgs: 0.75nC @ 4.5V ID_COMPONENTS: 2661539 Mounting Type: Surface Mount On Resistance Rds(on): 5ohm Package / Case: SC-89-6, SOT-563F, SOT-666 Power - Max: 250mW Rds On (max) @ Id, Vgs: 5 Ohm @ 200mA, 4.5V Rds(on) Test Voltage Vgs: 4.5V Series: TrenchFETВ® Threshold Voltage Vgs Typ: 400mV Transistor Polarity: N And P Channel Vgs(th) (max) @ Id: 400mV @ 250ВµA Other Names: SI1035X-T1-GE3TR
