Результаты поиска SI1031R-T1-GE3

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• SI1031R-T1-GE3
  Vishay Intertechnology — Vishay Intertechnology SI1031R-T1-GE3 Continuous Drain Current Id: 140mA Current - Continuous Drain (id) @ 25В° C: 140mA Drain Source Voltage Vds: -20V Drain To Source Voltage (vdss): 20V Fet Feature: Logic Level Gate Fet Type: MOSFET P-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 1.5nC @ 4.5V ID_COMPONENTS: 2663570 Mounting Type: Surface Mount On Resistance Rds(on): 20ohm Package / Case: SC-75-3, SOT-416, EMT3, 3-SSMini Power - Max: 250mW Rds On (max) @ Id, Vgs: 8 Ohm @ 150mA, 4.5V Rds(on) Test Voltage Vgs: 6V Series: TrenchFETВ® Threshold Voltage Vgs Typ: -1.2V Transistor Polarity: P Channel Vgs(th) (max) @ Id: 1.2V @ 250ВµA Other Names: SI1031R-T1-GE3TR