Результаты поиска RN1406T5LFT

Найдено 1 результатов.

• RN1406T5LFT
  TOSHIBA Semiconductor — TOSHIBA Semiconductor RN1406T5LFT Current - Collector (ic) (max): 100mA Current - Collector Cutoff (max): 500nA Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Mounting Type: Surface Mount Package / Case: SC-59-3, SMT3, SOT-346, TO-236 Power - Max: 200mW Resistor - Base (r1) (ohms): 4.7K Resistor - Emitter Base (r2) (ohms): 47K Transistor Type: NPN - Pre-Biased Vce Saturation (max) @ Ib, Ic: 300mV @ 250ВµA, 5mA Voltage - Collector Emitter Breakdown (max): 50V