Результаты поиска PSMN7R6-60PS,127

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• PSMN7R6-60PS,127
  NXP Semiconductors — NXP Semiconductors PSMN7R6-60PS,127 Configuration: Single Continuous Drain Current: 92 A Current - Continuous Drain (id) @ 25?° C: 92A Drain To Source Voltage (vdss): 60V Drain-source Breakdown Voltage: 60 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 38.7nC @ 10V Gate Charge Qg: 38.7 nC Gate-source Breakdown Voltage: 20 V ID_COMPONENTS: 1950594 Input Capacitance (ciss) @ Vds: 2651pF @ 30V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Mounting Type: Through Hole Package / Case: TO-220AB-3 Power - Max: 149W Power Dissipation: 149 W Rds On (max) @ Id, Vgs: 7.8 mOhm @ 25A, 10V Resistance Drain-source Rds (on): 7.8 mOhms Series: - Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 1mA RoHS: yes Drain-Source Breakdown Voltage: 60 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 7.8 mOhms Fall Time: 13 ns Rise Time: 21 ns Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 37 ns Other Names: 568-4970-5