Результаты поиска PSMN6R0-30YL,115
Найдено 1 результатов.
- NXP Semiconductors — NXP Semiconductors PSMN6R0-30YL,115 Configuration: Single Triple Source Continuous Drain Current: 79 A Current - Continuous Drain (id) @ 25В° C: 79A Drain To Source Voltage (vdss): 30V Drain-source Breakdown Voltage: 30 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 24nC @ 10V Gate-source Breakdown Voltage: 20 V ID_COMPONENTS: 1950664 Input Capacitance (ciss) @ Vds: 1425pF @ 12V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: LFPak-4 Power - Max: 55W Power Dissipation: 55 W Rds On (max) @ Id, Vgs: 6 mOhm @ 15A, 10V Resistance Drain-source Rds (on): 6 mOhms Series: - Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2.15V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 30 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 6 mOhms Fall Time: 11 ns Rise Time: 43 ns Factory Pack Quantity: 1500 Typical Turn-Off Delay Time: 31 ns Part # Aliases: PSMN6R0-30YL T/R Other Names: 568-4685-2, 934063076115, PSMN6R0-30YL T/R