Результаты поиска PSMN4R3-30PL,127

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• PSMN4R3-30PL,127
  NXP Semiconductors — NXP Semiconductors PSMN4R3-30PL,127 Continuous Drain Current: 100 A Current - Continuous Drain (id) @ 25?° C: 100A Drain To Source Voltage (vdss): 30V Drain-source Breakdown Voltage: 30 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 41.5nC @ 10V ID_COMPONENTS: 1950393 Input Capacitance (ciss) @ Vds: 2400pF @ 12V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Mounting Style: Through Hole Mounting Type: Through Hole Package / Case: TO-220AB-3 Power - Max: 103W Power Dissipation: 103 W Rds On (max) @ Id, Vgs: 4.3 mOhm @ 15A, 10V Resistance Drain-source Rds (on): 4.3 mOhms Series: - Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2.15V @ 1mA Other Names: 568-4897-5, 934063918127