Результаты поиска PSMN4R0-40YS,115
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- NXP Semiconductors — NXP Semiconductors PSMN4R0-40YS,115 Continuous Drain Current: 100 A Current - Continuous Drain (id) @ 25?° C: 100A Drain To Source Voltage (vdss): 40V Drain-source Breakdown Voltage: 40 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 38nC @ 10V ID_COMPONENTS: 1950389 Input Capacitance (ciss) @ Vds: 2410pF @ 20V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: LFPak-4 Power - Max: 106W Power Dissipation: 106 W Rds On (max) @ Id, Vgs: 4.2 mOhm @ 15A, 10V Resistance Drain-source Rds (on): 4 mOhms Series: - Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 40 V Resistance Drain-Source RDS (on): 4 mOhms Fall Time: 12 ns Rise Time: 19 ns Factory Pack Quantity: 1500 Typical Turn-Off Delay Time: 34 ns Other Names: 568-4905-2, 934063937115