Результаты поиска PSMN3R4-30BL,118

Найдено 2 результатов.

• PSMN3R4-30BL,118
  NXP Semiconductors — NXP Semiconductors PSMN3R4-30BL,118 Configuration: Single Continuous Drain Current: 100 A Drain-source Breakdown Voltage: 30 V Factory Pack Quantity: 800 Gate-source Breakdown Voltage: +/- 20 V Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Package / Case: D2PAK Power Dissipation: 114 W Resistance Drain-source Rds (on): 3.3 mOhms Rohs: yes Transistor Polarity: N-Channel RoHS: yes Drain-Source Breakdown Voltage: 30 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 3.3 mOhms
• PSMN3R4-30BL,118
  NXP Semiconductors — NXP Semiconductors PSMN3R4-30BL,118 Configuration: Single Continuous Drain Current: 100 A Drain-source Breakdown Voltage: 30 V Factory Pack Quantity: 800 Gate-source Breakdown Voltage: +/- 20 V Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Package / Case: D2PAK Power Dissipation: 114 W Resistance Drain-source Rds (on): 3.3 mOhms Rohs: yes Transistor Polarity: N-Channel RoHS: yes Drain-Source Breakdown Voltage: 30 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 3.3 mOhms