Результаты поиска PSMN3R0-60PS,127
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- NXP Semiconductors — NXP Semiconductors PSMN3R0-60PS,127 Configuration: Single Continuous Drain Current: 83.4 A, 100 A Current - Continuous Drain (id) @ 25?° C: 100A Drain To Source Voltage (vdss): 60V Drain-source Breakdown Voltage: 54 V, 60 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 130nC @ 10V Gate Charge Qg: 130 nC ID_COMPONENTS: 1951154 Input Capacitance (ciss) @ Vds: 8079pF @ 30V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Mounting Type: Through Hole Package / Case: TO-220AB-3 Power - Max: 306W Power Dissipation: 306 W Rds On (max) @ Id, Vgs: 3 mOhm @ 25A, 10V Resistance Drain-source Rds (on): 2.4 mOhms Series: - Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 54 V, 60 V Resistance Drain-Source RDS (on): 2.4 mOhms Fall Time: 22 ns Rise Time: 26 ns Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 77 ns Other Names: 568-4974-5, 934064275127