Результаты поиска PSMN040-200W,127

Найдено 2 результатов.

• PSMN040-200W,127
  Philips Semiconductors — Philips Semiconductors PSMN040-200W,127 Product Category: MOSFET RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 200 V Gate-Source Breakdown Voltage: +/- 20 V Continuous Drain Current: 50 A Resistance Drain-Source RDS (on): 0.04 Ohms Configuration: Single Maximum Operating Temperature: + 175 C Mounting Style: Through Hole Package / Case: TO-247 Fall Time: 92 ns Minimum Operating Temperature: - 55 C Power Dissipation: 300 W Rise Time: 94 ns Factory Pack Quantity: 25 Typical Turn-Off Delay Time: 230 ns Part # Aliases: PSMN040-200W
• PSMN040-200W,127
  NXP Semiconductors — Philips Semiconductors PSMN040-200W,127 Product Category: MOSFET RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 200 V Gate-Source Breakdown Voltage: +/- 20 V Continuous Drain Current: 50 A Resistance Drain-Source RDS (on): 0.04 Ohms Configuration: Single Maximum Operating Temperature: + 175 C Mounting Style: Through Hole Package / Case: TO-247 Fall Time: 92 ns Minimum Operating Temperature: - 55 C Power Dissipation: 300 W Rise Time: 94 ns Factory Pack Quantity: 25 Typical Turn-Off Delay Time: 230 ns Part # Aliases: PSMN040-200W