Результаты поиска PSMN026-80YS,115
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- NXP Semiconductors — NXP Semiconductors PSMN026-80YS,115 Continuous Drain Current: 34 A Current - Continuous Drain (id) @ 25В° C: 34A Drain To Source Voltage (vdss): 80V Drain-source Breakdown Voltage: 80 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 20nC @ 10V ID_COMPONENTS: 1950472 Input Capacitance (ciss) @ Vds: 1200pF @ 40V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: LFPak-4 Power - Max: 74W Power Dissipation: 74 W Rds On (max) @ Id, Vgs: 27.5 mOhm @ 5A, 10V Resistance Drain-source Rds (on): 12.9 mOhms Series: - Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 80 V Resistance Drain-Source RDS (on): 12.9 mOhms Fall Time: 5 ns Rise Time: 6 ns Factory Pack Quantity: 1500 Typical Turn-Off Delay Time: 26 ns Other Names: 568-4910-2, 934063933115