Результаты поиска PSMN022-30PL,127

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• PSMN022-30PL,127
  NXP Semiconductors — NXP Semiconductors PSMN022-30PL,127 Configuration: Single Continuous Drain Current: 30 A Current - Continuous Drain (id) @ 25В° C: 30A Drain To Source Voltage (vdss): 30V Drain-source Breakdown Voltage: 30 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 9nC @ 10V Gate-source Breakdown Voltage: +/- 20 V Input Capacitance (ciss) @ Vds: 447pF @ 15V Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Mounting Type: Through Hole Package / Case: TO-220-3 Power - Max: 41W Power Dissipation: 41 W Rds On (max) @ Id, Vgs: 22 mOhm @ 5A, 10V Resistance Drain-source Rds (on): 22 mOhms Series: - Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2.15V @ 1mA RoHS: yes Drain-Source Breakdown Voltage: 30 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 22 mOhms Factory Pack Quantity: 50