Результаты поиска PSMN020-100YS,115

Найдено 2 результатов.

• PSMN020-100YS,115
  NXP Semiconductors — NXP Semiconductors PSMN020-100YS,115 Configuration: Single Continuous Drain Current: 43 A Current - Continuous Drain (id) @ 25В° C: 43A Drain To Source Voltage (vdss): 100V Drain-source Breakdown Voltage: 100 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 41nC @ 10V Gate Charge Qg: 41 nC Gate-source Breakdown Voltage: +/- 20 V ID_COMPONENTS: 1950700 Input Capacitance (ciss) @ Vds: 2210pF @ 50V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: LFPak-4 Power - Max: 106W Power Dissipation: 106 W Rds On (max) @ Id, Vgs: 20.5 mOhm @ 15A, 10V Resistance Drain-source Rds (on): 37 mOhms Series: - Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 1mA RoHS: yes Drain-Source Breakdown Voltage: 100 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 37 mOhms Fall Time: 15 ns Rise Time: 18.1 ns Factory Pack Quantity: 1500 Typical Turn-Off Delay Time: 37.8 ns Other Names: 568-4975-2
• PSMN020-100YS,115
  NXP Semiconductors — NXP Semiconductors PSMN020-100YS,115 Configuration: Single Continuous Drain Current: 43 A Current - Continuous Drain (id) @ 25В° C: 43A Drain To Source Voltage (vdss): 100V Drain-source Breakdown Voltage: 100 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 41nC @ 10V Gate Charge Qg: 41 nC Gate-source Breakdown Voltage: +/- 20 V ID_COMPONENTS: 1950700 Input Capacitance (ciss) @ Vds: 2210pF @ 50V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: LFPak-4 Power - Max: 106W Power Dissipation: 106 W Rds On (max) @ Id, Vgs: 20.5 mOhm @ 15A, 10V Resistance Drain-source Rds (on): 37 mOhms Series: - Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 1mA RoHS: yes Drain-Source Breakdown Voltage: 100 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 37 mOhms Fall Time: 15 ns Rise Time: 18.1 ns Factory Pack Quantity: 1500 Typical Turn-Off Delay Time: 37.8 ns Other Names: 568-4975-2