Результаты поиска PSMN008-75P,127

Найдено 2 результатов.

• PSMN008-75P,127
  NXP Semiconductors — NXP Semiconductors PSMN008-75P,127 Configuration: Single Continuous Drain Current: 75 A Current - Continuous Drain (id) @ 25В° C: 75A Drain To Source Voltage (vdss): 75V Drain-source Breakdown Voltage: 75 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 122.8nC @ 10V Gate-source Breakdown Voltage: 20 V ID_COMPONENTS: 1951449 Input Capacitance (ciss) @ Vds: 5260pF @ 25V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Through Hole Package / Case: TO-220AB-3 Power - Max: 230W Power Dissipation: 230000 mW Rds On (max) @ Id, Vgs: 8.5 mOhm @ 25A, 10V Resistance Drain-source Rds (on): 0.0085 Ohm @ 10 V Series: TrenchMOSв„ў Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 75 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 0.0085 Ohms Fall Time: 80 ns Rise Time: 55 ns Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 88 ns Part # Aliases: PSMN008-75P Other Names: 934056398127, PSMN008-75P
• PSMN008-75P,127
  NXP Semiconductors — NXP Semiconductors PSMN008-75P,127 Configuration: Single Continuous Drain Current: 75 A Current - Continuous Drain (id) @ 25В° C: 75A Drain To Source Voltage (vdss): 75V Drain-source Breakdown Voltage: 75 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 122.8nC @ 10V Gate-source Breakdown Voltage: 20 V ID_COMPONENTS: 1951449 Input Capacitance (ciss) @ Vds: 5260pF @ 25V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Through Hole Package / Case: TO-220AB-3 Power - Max: 230W Power Dissipation: 230000 mW Rds On (max) @ Id, Vgs: 8.5 mOhm @ 25A, 10V Resistance Drain-source Rds (on): 0.0085 Ohm @ 10 V Series: TrenchMOSв„ў Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 75 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 0.0085 Ohms Fall Time: 80 ns Rise Time: 55 ns Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 88 ns Part # Aliases: PSMN008-75P Other Names: 934056398127, PSMN008-75P