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• PSMN005-25D,118
  NXP Semiconductors — NXP Semiconductors PSMN005-25D,118 Configuration: Single Dual Drain Continuous Drain Current: 75 A Current - Continuous Drain (id) @ 25В° C: 75A Drain To Source Voltage (vdss): 25V Drain-source Breakdown Voltage: 25 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 60nC @ 5V Gate-source Breakdown Voltage: +/- 15 V Input Capacitance (ciss) @ Vds: 3500pF @ 20V Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: DPak, TO-252 (2 leads+tab), SC-63 Power - Max: 125W Power Dissipation: 125 W Rds On (max) @ Id, Vgs: 5.8 mOhm @ 25A, 10V Resistance Drain-source Rds (on): 0.0058 Ohms Series: TrenchMOSв„ў Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2V @ 1mA Other Names: 934055816118, PSMN005-25D /T3