Результаты поиска PMR370XN,115
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- NXP Semiconductors — NXP Semiconductors PMR370XN,115 Configuration: Single Continuous Drain Current: 0.84 A Current - Continuous Drain (id) @ 25?° C: 840mA Drain To Source Voltage (vdss): 30V Drain-source Breakdown Voltage: 30 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 0.65nC @ 4.5V Gate-source Breakdown Voltage: +/- 12 V ID_COMPONENTS: 1951754 Input Capacitance (ciss) @ Vds: 37pF @ 25V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: EMT3 (SOT-416, SC-75-3) Power - Max: 530mW Power Dissipation: 530 mW Rds On (max) @ Id, Vgs: 440 mOhm @ 200mA, 4.5V Resistance Drain-source Rds (on): 0.44 Ohm @ 4.5 V Series: TrenchMOS?„? Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 1.5V @ 250?µA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 30 V Gate-Source Breakdown Voltage: +/- 12 V Resistance Drain-Source RDS (on): 440 mOhms at 4.5 V Fall Time: 9.5 ns Rise Time: 9.5 ns Factory Pack Quantity: 3000 Typical Turn-Off Delay Time: 14 ns Part # Aliases: PMR370XN T/R Other Names: 934057957115, PMR370XN T/R