Результаты поиска PMR280UN,115

Найдено 3 результатов.

• PMR280UN,115
  NXP Semiconductors — NXP Semiconductors PMR280UN,115 Configuration: Single Continuous Drain Current: 0.98 A Current - Continuous Drain (id) @ 25В° C: 980mA Drain To Source Voltage (vdss): 20V Drain-source Breakdown Voltage: 20 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 0.89nC @ 4.5V Gate-source Breakdown Voltage: +/- 8 V ID_COMPONENTS: 1951747 Input Capacitance (ciss) @ Vds: 45pF @ 20V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: EMT3 (SOT-416, SC-75-3) Power - Max: 530mW Power Dissipation: 530 mW Rds On (max) @ Id, Vgs: 340 mOhm @ 200mA, 4.5V Resistance Drain-source Rds (on): 0.34 Ohm @ 4.5 V Series: TrenchMOSв„ў Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 1V @ 250ВµA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 20 V Gate-Source Breakdown Voltage: +/- 8 V Resistance Drain-Source RDS (on): 340 mOhms at 4.5 V Fall Time: 10 ns Rise Time: 10 ns Factory Pack Quantity: 3000 Typical Turn-Off Delay Time: 18.5 ns Part # Aliases: PMR280UN T/R Other Names: 934057958115, PMR280UN T/R
• PMR280UN,115
  NXP Semiconductors — NXP Semiconductors PMR280UN,115 Configuration: Single Continuous Drain Current: 0.98 A Current - Continuous Drain (id) @ 25В° C: 980mA Drain To Source Voltage (vdss): 20V Drain-source Breakdown Voltage: 20 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 0.89nC @ 4.5V Gate-source Breakdown Voltage: +/- 8 V ID_COMPONENTS: 1951747 Input Capacitance (ciss) @ Vds: 45pF @ 20V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: EMT3 (SOT-416, SC-75-3) Power - Max: 530mW Power Dissipation: 530 mW Rds On (max) @ Id, Vgs: 340 mOhm @ 200mA, 4.5V Resistance Drain-source Rds (on): 0.34 Ohm @ 4.5 V Series: TrenchMOSв„ў Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 1V @ 250ВµA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 20 V Gate-Source Breakdown Voltage: +/- 8 V Resistance Drain-Source RDS (on): 340 mOhms at 4.5 V Fall Time: 10 ns Rise Time: 10 ns Factory Pack Quantity: 3000 Typical Turn-Off Delay Time: 18.5 ns Part # Aliases: PMR280UN T/R Other Names: 934057958115, PMR280UN T/R
• RWR74S24R9FRRSL
  Vishay Dale [MIL] — RES 24.9 OHM 5W 1% WW AXIAL