Результаты поиска PMGD400UN,115
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- NXP Semiconductors — NXP Semiconductors PMGD400UN,115 Configuration: Dual Continuous Drain Current: 0.71 A Current - Continuous Drain (id) @ 25?° C: 710mA Drain To Source Voltage (vdss): 30V Drain-source Breakdown Voltage: 30 V Fet Feature: Logic Level Gate Fet Type: 2 N-Channel (Dual) Gate Charge (qg) @ Vgs: 0.89nC @ 4.5V Gate-source Breakdown Voltage: +/- 8 V ID_COMPONENTS: 1951756 Input Capacitance (ciss) @ Vds: 43pF @ 25V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SC-70-6, SC-88, SOT-363 Power - Max: 410mW Power Dissipation: 410 mW Rds On (max) @ Id, Vgs: 480 mOhm @ 200mA, 4.5V Resistance Drain-source Rds (on): 0.48 Ohm @ 4.5 V Series: TrenchMOS?„? Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 1V @ 250?µA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 30 V Gate-Source Breakdown Voltage: +/- 8 V Resistance Drain-Source RDS (on): 480 mOhms at 4.5 V Fall Time: 7.5 ns Rise Time: 7.5 ns Factory Pack Quantity: 3000 Typical Turn-Off Delay Time: 18 ns Part # Aliases: PMGD400UN T/R Other Names: 568-2368-2, 934057724115, PMGD400UN T/R