Результаты поиска PMF780SN,115

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• PMF780SN,115
  NXP Semiconductors — NXP Semiconductors PMF780SN,115 Configuration: Single Continuous Drain Current: 0.57 A Current - Continuous Drain (id) @ 25?° C: 570mA Drain To Source Voltage (vdss): 60V Drain-source Breakdown Voltage: 60 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 1.05nC @ 10V Gate-source Breakdown Voltage: +/- 20 V ID_COMPONENTS: 1951778 Input Capacitance (ciss) @ Vds: 23pF @ 30V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SC-70-3, SOT-323-3 Power - Max: 560mW Power Dissipation: 560 mW Rds On (max) @ Id, Vgs: 920 mOhm @ 300mA, 10V Resistance Drain-source Rds (on): 0.92 Ohm @ 10 V Series: TrenchMOS?„? Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2V @ 250?µA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 60 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 920 mOhms Fall Time: 4 ns Rise Time: 4 ns Factory Pack Quantity: 3000 Typical Turn-Off Delay Time: 5 ns Part # Aliases: PMF780SN T/R Other Names: 934057708115, PMF780SN T/R