Результаты поиска PMEG3010ET,215
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- NXP Semiconductors — NXP Semiconductors PMEG3010ET,215 Capacitance @ Vr, F: 70pF @ 1V, 1MHz Configuration: Single Current - Average Rectified (io): 1A (DC) Current - Reverse Leakage @ Vr: 150?µA @ 30V Diode Type: Schottky Forward Continuous Current: 1 A Forward Voltage Drop: 0.56 V ID_COMPONENTS: 1943272 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Max Surge Current: 9 A Maximum Power Dissipation: 420 mW Maximum Reverse Leakage Current: 150 uA Mounting Style: SMD/SMT Mounting Type: Surface Mount Operating Temperature Range: + 150 C Package / Case: SOT-23-3, TO-236-3, Micro3?„?, SSD3, SST3 Peak Reverse Voltage: 30 V Product: Schottky Diodes Reverse Recovery Time (trr): - Series: - Speed: Fast Recovery = 200mA (Io) Voltage - Dc Reverse (vr) (max): 30V Voltage - Forward (vf) (max) @ If: 560mV @ 1A Other Names: 568-4101-2, 934061049215, PMEG3010ET T/R