Результаты поиска PMBT5550,215

Найдено 2 результатов.

• PMBT5550,215
  NXP Semiconductors — NXP Semiconductors PMBT5550,215 Collector- Emitter Voltage Vceo Max: 140 V Configuration: Single Continuous Collector Current: 300 mA Current - Collector (ic) (max): 300mA Current - Collector Cutoff (max): - Dc Collector/base Gain Hfe Min: 60 Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 10mA, 5V Emitter- Base Voltage Vebo: 6 V Frequency - Transition: 300MHz ID_COMPONENTS: 1949818 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 600 mA Maximum Operating Frequency: 300 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SOT-23-3, TO-236-3, Micro3?„?, SSD3, SST3 Power - Max: 250mW Power Dissipation: 250 mW Series: - Transistor Polarity: NPN Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 250mV @ 5mA, 50mA Voltage - Collector Emitter Breakdown (max): 140V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 160 V Collector- Emitter Voltage VCEO Max: 140 V Emitter- Base Voltage VEBO: 6 V Maximum DC Collector Current: 600 mA Gain Bandwidth Product fT: 300 MHz DC Collector/Base Gain hfe Min: 60 DC Current Gain hFE Max: 60 at 1 mA at 5 V Maximum Power Dissipation: 250 mW Factory Pack Quantity: 3000 Part # Aliases: PMBT5550 T/R Other Names: 933845720215::PMBT5550 T/R::PMBT5550 T/R
• PMBT5550,215
  NXP Semiconductors — NXP Semiconductors PMBT5550,215 Collector- Emitter Voltage Vceo Max: 140 V Configuration: Single Continuous Collector Current: 300 mA Current - Collector (ic) (max): 300mA Current - Collector Cutoff (max): - Dc Collector/base Gain Hfe Min: 60 Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 10mA, 5V Emitter- Base Voltage Vebo: 6 V Frequency - Transition: 300MHz ID_COMPONENTS: 1949818 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 600 mA Maximum Operating Frequency: 300 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SOT-23-3, TO-236-3, Micro3?„?, SSD3, SST3 Power - Max: 250mW Power Dissipation: 250 mW Series: - Transistor Polarity: NPN Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 250mV @ 5mA, 50mA Voltage - Collector Emitter Breakdown (max): 140V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 160 V Collector- Emitter Voltage VCEO Max: 140 V Emitter- Base Voltage VEBO: 6 V Maximum DC Collector Current: 600 mA Gain Bandwidth Product fT: 300 MHz DC Collector/Base Gain hfe Min: 60 DC Current Gain hFE Max: 60 at 1 mA at 5 V Maximum Power Dissipation: 250 mW Factory Pack Quantity: 3000 Part # Aliases: PMBT5550 T/R Other Names: 933845720215::PMBT5550 T/R::PMBT5550 T/R