Результаты поиска PMBT3906,215

Найдено 2 результатов.

• PMBT3906,215
  NXP Semiconductors — NXP Semiconductors PMBT3906,215 Collector Current (dc) (max): 200mA Collector- Emitter Voltage Vceo Max: - 40 V Collector-base Voltage(max): 40V Collector-emitter Voltage: 40V Configuration: Single Continuous Collector Current: - 200 mA Current - Collector (ic) (max): 200mA Current - Collector Cutoff (max): - Dc Collector/base Gain Hfe Min: 30 Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V Emitter- Base Voltage Vebo: - 6 V Emitter-base Voltage (max): 6V Frequency (max): 250MHz Frequency - Transition: 250MHz Gain Bandwidth Product Ft: 250 MHz ID_COMPONENTS: 1949466 Lead Free Status / Rohs Status: Compliant Maximum Dc Collector Current: - 200 mA Maximum Operating Frequency: 250 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting: Surface Mount Mounting Style: SMD/SMT Mounting Type: Surface Mount Number Of Elements: 1 Operating Temp Range: -65C to 150C Operating Temperature Classification: Military Package / Case: SOT-23-3, TO-236-3, Micro3в„ў, SSD3, SST3 Package Type: TO-236AB Pin Count: 3 Power - Max: 250mW Power Dissipation: 250 mW Series: - Transistor Polarity: PNP Transistor Type: PNP Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 50mA Voltage - Collector Emitter Breakdown (max): 40V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: - 40 V Collector- Emitter Voltage VCEO Max: - 40 V Emitter- Base Voltage VEBO: - 6 V Maximum DC Collector Current: - 200 mA Gain Bandwidth Product fT: 250 MHz DC Collector/Base Gain hfe Min: 30 DC Current Gain hFE Max: 300 Maximum Power Dissipation: 250 mW Factory Pack Quantity: 3000 Part # Aliases: PMBT3906 T/R Other Names: 568-1742-2, 933776010215, PMBT3906 T/R
• PMBT3906,215
  NXP Semiconductors — NXP Semiconductors PMBT3906,215 Collector Current (dc) (max): 200mA Collector- Emitter Voltage Vceo Max: - 40 V Collector-base Voltage(max): 40V Collector-emitter Voltage: 40V Configuration: Single Continuous Collector Current: - 200 mA Current - Collector (ic) (max): 200mA Current - Collector Cutoff (max): - Dc Collector/base Gain Hfe Min: 30 Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V Emitter- Base Voltage Vebo: - 6 V Emitter-base Voltage (max): 6V Frequency (max): 250MHz Frequency - Transition: 250MHz Gain Bandwidth Product Ft: 250 MHz ID_COMPONENTS: 1949466 Lead Free Status / Rohs Status: Compliant Maximum Dc Collector Current: - 200 mA Maximum Operating Frequency: 250 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting: Surface Mount Mounting Style: SMD/SMT Mounting Type: Surface Mount Number Of Elements: 1 Operating Temp Range: -65C to 150C Operating Temperature Classification: Military Package / Case: SOT-23-3, TO-236-3, Micro3в„ў, SSD3, SST3 Package Type: TO-236AB Pin Count: 3 Power - Max: 250mW Power Dissipation: 250 mW Series: - Transistor Polarity: PNP Transistor Type: PNP Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 50mA Voltage - Collector Emitter Breakdown (max): 40V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: - 40 V Collector- Emitter Voltage VCEO Max: - 40 V Emitter- Base Voltage VEBO: - 6 V Maximum DC Collector Current: - 200 mA Gain Bandwidth Product fT: 250 MHz DC Collector/Base Gain hfe Min: 30 DC Current Gain hFE Max: 300 Maximum Power Dissipation: 250 mW Factory Pack Quantity: 3000 Part # Aliases: PMBT3906 T/R Other Names: 568-1742-2, 933776010215, PMBT3906 T/R