Результаты поиска PMBT2222A,215
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- NXP Semiconductors — NXP Semiconductors PMBT2222A,215 Collector Current (dc) (max): 600mA Collector- Emitter Voltage Vceo Max: 40 V Collector-base Voltage: 75V Collector-emitter Voltage: 40V Configuration: Single Continuous Collector Current: 600 mA Current - Collector (ic) (max): 600mA Current - Collector Cutoff (max): - Dc Collector/base Gain Hfe Min: 30 Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 10V Emitter- Base Voltage Vebo: 6 V Emitter-base Voltage: 6V Frequency (max): 300MHz Frequency - Transition: 300MHz Gain Bandwidth Product Ft: 300 MHz ID_COMPONENTS: 1949453 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 800 mA Maximum Operating Frequency: 300 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting: Surface Mount Mounting Style: SMD/SMT Mounting Type: Surface Mount Number Of Elements: 1 Operating Temp Range: -65C to 150C Operating Temperature Classification: Military Package / Case: SOT-23-3, TO-236-3, Micro3в„ў, SSD3, SST3 Package Type: TO-236AB Pin Count: 3 Power - Max: 250mW Power Dissipation: 250 mW Series: - Transistor Polarity: NPN Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 1V @ 50mA, 500mA Voltage - Collector Emitter Breakdown (max): 40V Other Names: 568-1738-2, 933821790215, PMBT2222A T/R