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• PHT4NQ10T,135
  NXP Semiconductors — NXP Semiconductors PHT4NQ10T,135 Configuration: Single Dual Drain Continuous Drain Current: 3.5 A Current - Continuous Drain (id) @ 25?° C: 3.5A Drain To Source Voltage (vdss): 100V Drain-source Breakdown Voltage: 100 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 7.4nC @ 10V Gate-source Breakdown Voltage: +/- 20 V ID_COMPONENTS: 1950622 Input Capacitance (ciss) @ Vds: 300pF @ 25V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261 Power - Max: 6.9W Power Dissipation: 6900 mW Rds On (max) @ Id, Vgs: 250 mOhm @ 1.75A, 10V Resistance Drain-source Rds (on): 0.25 Ohm @ 10 V Series: TrenchMOS?„? Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 100 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 0.25 Ohms Fall Time: 11 ns Rise Time: 13 ns Factory Pack Quantity: 4000 Typical Turn-Off Delay Time: 20 ns Part # Aliases: /T3 PHT4NQ10T Other Names: 934056117135, PHT4NQ10T /T3