Результаты поиска PHP20N06T,127

Найдено 2 результатов.

• PHP20N06T,127
  NXP Semiconductors — NXP Semiconductors PHP20N06T,127 Configuration: Single Continuous Drain Current: 20.3 A Current - Continuous Drain (id) @ 25В° C: 20.3A Drain To Source Voltage (vdss): 55V Drain-source Breakdown Voltage: 55 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 11nC @ 10V Gate-source Breakdown Voltage: 20 V ID_COMPONENTS: 1950526 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Through Hole Package / Case: TO-220AB-3 Power - Max: 62W Power Dissipation: 62000 mW Rds On (max) @ Id, Vgs: 75 mOhm @ 10A, 10V Resistance Drain-source Rds (on): 0.075 Ohm @ 10 V Series: TrenchMOSв„ў Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 55 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 0.075 Ohms Fall Time: 40 ns Rise Time: 50 ns Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 70 ns Part # Aliases: PHP20N06T Other Names: 934056614127::PHP20N06T::PHP20N06T
• PHP20N06T,127
  NXP Semiconductors — NXP Semiconductors PHP20N06T,127 Configuration: Single Continuous Drain Current: 20.3 A Current - Continuous Drain (id) @ 25В° C: 20.3A Drain To Source Voltage (vdss): 55V Drain-source Breakdown Voltage: 55 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 11nC @ 10V Gate-source Breakdown Voltage: 20 V ID_COMPONENTS: 1950526 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Through Hole Package / Case: TO-220AB-3 Power - Max: 62W Power Dissipation: 62000 mW Rds On (max) @ Id, Vgs: 75 mOhm @ 10A, 10V Resistance Drain-source Rds (on): 0.075 Ohm @ 10 V Series: TrenchMOSв„ў Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 55 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 0.075 Ohms Fall Time: 40 ns Rise Time: 50 ns Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 70 ns Part # Aliases: PHP20N06T Other Names: 934056614127::PHP20N06T::PHP20N06T