Результаты поиска PHK4NQ10T,518

Найдено 1 результатов.

• PHK4NQ10T,518
  NXP Semiconductors — NXP Semiconductors PHK4NQ10T,518 Current - Continuous Drain (id) @ 25В° C: 4A Drain To Source Voltage (vdss): 100V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 22nC @ 10V Input Capacitance (ciss) @ Vds: 880pF @ 25V Mounting Type: Surface Mount Package / Case: 8-SOIC (3.9mm Width) Power - Max: 2.5W Rds On (max) @ Id, Vgs: 70 mOhm @ 4A, 10V Series: TrenchMOSв„ў Vgs(th) (max) @ Id: 4V @ 1mA Other Names: 934055907518, PHK4NQ10T /T3