Результаты поиска PHK28NQ03LT,518

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• PHK28NQ03LT,518
  NXP Semiconductors — NXP Semiconductors PHK28NQ03LT,518 Configuration: Single Quad Drain Triple Source Continuous Drain Current: 23.7 A Current - Continuous Drain (id) @ 25?° C: 23.7A Drain To Source Voltage (vdss): 30V Drain-source Breakdown Voltage: 30 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 30.3nC @ 4.5V Gate-source Breakdown Voltage: +/- 20 V Input Capacitance (ciss) @ Vds: 2800pF @ 20V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: 8-SOIC (3.9mm Width) Power - Max: 6.25W Power Dissipation: 6.25 W Rds On (max) @ Id, Vgs: 6.5 mOhm @ 14A, 10V Resistance Drain-source Rds (on): 0.0065 Ohms Series: TrenchMOS?„? Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2V @ 1mA Other Names: 934057264518, PHK28NQ03LT /T3