Результаты поиска PHK13N03LT,518

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• PHK13N03LT,518
  NXP Semiconductors — NXP Semiconductors PHK13N03LT,518 Configuration: Single Quad Drain Triple Source Continuous Drain Current: 13.8 A Current - Continuous Drain (id) @ 25?° C: 13.8A Drain To Source Voltage (vdss): 30V Drain-source Breakdown Voltage: 30 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 10.7nC @ 5V Gate-source Breakdown Voltage: +/- 20 V Input Capacitance (ciss) @ Vds: 752pF @ 15V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: 8-SOIC (3.9mm Width) Power - Max: 6.25W Power Dissipation: 6.25 W Rds On (max) @ Id, Vgs: 20 mOhm @ 8A, 10V Resistance Drain-source Rds (on): 0.02 Ohms Series: TrenchMOS?„? Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2V @ 250?µA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 30 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 0.02 Ohms Fall Time: 11 ns Rise Time: 7 ns Factory Pack Quantity: 2500 Typical Turn-Off Delay Time: 23 ns Part # Aliases: /T3 PHK13N03LT Other Names: 934057754518, PHK13N03LT /T3