Результаты поиска PHC21025,118

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• PHC21025,118
  NXP Semiconductors — NXP Semiconductors PHC21025,118 Configuration: Dual Dual Drain Continuous Drain Current: 3.5 A, - 2.3 A Current - Continuous Drain (id) @ 25?° C: 3.5A, 2.3A Drain To Source Voltage (vdss): 30V Drain-source Breakdown Voltage: 30 V Fet Feature: Logic Level Gate Fet Type: N and P-Channel Gate Charge (qg) @ Vgs: 30nC @ 10V Gate-source Breakdown Voltage: +/- 20 V Input Capacitance (ciss) @ Vds: 250pF @ 20V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: 8-SOIC (3.9mm Width) Power - Max: 2W Power Dissipation: 2 W Rds On (max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V Resistance Drain-source Rds (on): 0.1 Ohms Series: - Transistor Polarity: N and P-Channel Vgs(th) (max) @ Id: 2.8V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 30 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 0.1 Ohms Factory Pack Quantity: 2500 Part # Aliases: /T3 PHC21025 Other Names: 934034320118, PHC21025 /T3