Результаты поиска PHB32N06LT,118

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• PHB32N06LT,118
  NXP Semiconductors — NXP Semiconductors PHB32N06LT,118 Configuration: Single Continuous Drain Current: 34 A Current - Continuous Drain (id) @ 25В° C: 34A Drain To Source Voltage (vdss): 60V Drain-source Breakdown Voltage: 60 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 17nC @ 5V Gate-source Breakdown Voltage: 15 V ID_COMPONENTS: 1950388 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: DВІPak, TO-263 (2 leads + tab) Power - Max: 97W Power Dissipation: 97000 mW Rds On (max) @ Id, Vgs: 37 mOhm @ 20A, 10V Resistance Drain-source Rds (on): 0.037 Ohm @ 10 V Series: TrenchMOSв„ў Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 60 V Gate-Source Breakdown Voltage: 15 V Resistance Drain-Source RDS (on): 0.037 Ohms Fall Time: 55 ns Rise Time: 120 ns Factory Pack Quantity: 800 Typical Turn-Off Delay Time: 45 ns Part # Aliases: /T3 PHB32N06LT Other Names: 934056954118::PHB32N06LT /T3::PHB32N06LT /T3