Результаты поиска PHB29N08T,118

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• PHB29N08T,118
  NXP Semiconductors — NXP Semiconductors PHB29N08T,118 Configuration: Single Continuous Drain Current: 27 A Current - Continuous Drain (id) @ 25?° C: 27A Drain To Source Voltage (vdss): 75V Drain-source Breakdown Voltage: 75 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 19nC @ 10V Gate Charge Qg: 19 nC Gate-source Breakdown Voltage: 30 V ID_COMPONENTS: 1950549 Input Capacitance (ciss) @ Vds: 810pF @ 25V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: D??Pak, TO-263 (2 leads + tab) Power - Max: 88W Power Dissipation: 88 W Rds On (max) @ Id, Vgs: 50 mOhm @ 14A, 11V Resistance Drain-source Rds (on): 96 mOhms Series: TrenchMOS?„? Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 5V @ 2mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 75 V Gate-Source Breakdown Voltage: 30 V Resistance Drain-Source RDS (on): 96 mOhms Fall Time: 9 ns Rise Time: 70 ns Factory Pack Quantity: 800 Typical Turn-Off Delay Time: 15 ns Part # Aliases: /T3 PHB29N08T Other Names: 568-2190-2, 934057125118, PHB29N08T /T3