Результаты поиска PHB153NQ08LT,118

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• PHB153NQ08LT,118
  NXP Semiconductors — NXP Semiconductors PHB153NQ08LT,118 Current - Continuous Drain (id) @ 25В° C: 75A Drain To Source Voltage (vdss): 75V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 95nC @ 5V Input Capacitance (ciss) @ Vds: 8770pF @ 25V Mounting Type: Surface Mount Package / Case: DВІPak, TO-263 (2 leads + tab) Power - Max: 300W Rds On (max) @ Id, Vgs: 5.5 mOhm @ 25A, 10V Series: TrenchMOSв„ў Vgs(th) (max) @ Id: 2V @ 1mA Other Names: 934058282118, PHB153NQ08LT /T3