Результаты поиска PHB112N06T,118

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• PHB112N06T,118
  NXP Semiconductors — NXP Semiconductors PHB112N06T,118 Current - Continuous Drain (id) @ 25В° C: 75A Drain To Source Voltage (vdss): 55V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 87nC @ 10V Input Capacitance (ciss) @ Vds: 4352pF @ 25V Mounting Type: Surface Mount Package / Case: DВІPak, TO-263 (2 leads + tab) Power - Max: 200W Rds On (max) @ Id, Vgs: 8 mOhm @ 25A, 10V Series: TrenchMOSв„ў Vgs(th) (max) @ Id: 4V @ 1mA Other Names: 934056648118, PHB112N06T /T3