Результаты поиска PH4330L,115

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• PH4330L,115
  NXP Semiconductors — NXP Semiconductors PH4330L,115 Configuration: Single Continuous Drain Current: 95.9 A Current - Continuous Drain (id) @ 25В° C: 95.9A Drain To Source Voltage (vdss): 30V Drain-source Breakdown Voltage: 30 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 22.9nC @ 4.5V Gate Charge Qg: 22.9 nC Gate-source Breakdown Voltage: +/- 20 V ID_COMPONENTS: 1951448 Input Capacitance (ciss) @ Vds: 2786pF @ 12V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: LFPak-4 Power - Max: 62.5W Power Dissipation: 62.5 W Rds On (max) @ Id, Vgs: 4.3 mOhm @ 25A, 10V Resistance Drain-source Rds (on): 4.3 mOhms Series: - Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2.5V @ 1mA RoHS: yes Drain-Source Breakdown Voltage: 30 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 4.3 mOhms Fall Time: 19 ns Rise Time: 43 ns Factory Pack Quantity: 1500 Typical Turn-Off Delay Time: 35 ns Other Names: 934061961115, PH4330L T/R