Результаты поиска PH2925U,115
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- NXP Semiconductors — NXP Semiconductors PH2925U,115 Configuration: Single Triple Source Continuous Drain Current: 100 A Current - Continuous Drain (id) @ 25В° C: 100A Drain To Source Voltage (vdss): 25V Drain-source Breakdown Voltage: 25 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 92nC @ 4.5V Gate-source Breakdown Voltage: +/- 10 V Input Capacitance (ciss) @ Vds: 6150pF @ 10V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: LFPak-4 Power - Max: 62.5W Power Dissipation: 62.5 W Rds On (max) @ Id, Vgs: 3 mOhm @ 25A, 4.5V Resistance Drain-source Rds (on): 0.003 Ohms Series: TrenchMOSв„ў Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 950mV @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 25 V Gate-Source Breakdown Voltage: +/- 10 V Resistance Drain-Source RDS (on): 0.003 Ohms Fall Time: 114 ns Rise Time: 80 ns Factory Pack Quantity: 1500 Typical Turn-Off Delay Time: 258 ns Part # Aliases: PH2925U T/R Other Names: 568-2344-2, 934057828115, PH2925U T/R