Результаты поиска PDTC123YE,115

Найдено 1 результатов.

• PDTC123YE,115
  NXP Semiconductors — NXP Semiconductors PDTC123YE,115 Collector- Emitter Voltage Vceo Max: 50 V Configuration: Single Current - Collector (ic) (max): 100mA Current - Collector Cutoff (max): 1?µA Dc Current Gain (hfe) (min) @ Ic, Vce: 35 @ 5mA, 5V ID_COMPONENTS: 1947870 Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Peak Dc Collector Current: 100 mA Power - Max: 150mW Resistor - Base (r1) (ohms): 2.2K Resistor - Emitter Base (r2) (ohms): 10K Transistor Polarity: NPN Transistor Type: NPN - Pre-Biased Typical Input Resistor: 2.2 KOhm Typical Resistor Ratio: 0.222 Vce Saturation (max) @ Ib, Ic: 150mV @ 500?µA, 10mA Voltage - Collector Emitter Breakdown (max): 50V Product Category: Transistors Switching - Resistor Biased RoHS: yes Collector- Emitter Voltage VCEO Max: 50 V Peak DC Collector Current: 100 mA Factory Pack Quantity: 3000 Part # Aliases: PDTC123YE T/R Other Names: 934058807115, PDTC123YE T/R