Результаты поиска PDTC115TE,115
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- NXP Semiconductors — NXP Semiconductors PDTC115TE,115 Collector- Emitter Voltage Vceo Max: 50 V Configuration: Single Current - Collector (ic) (max): 100mA Current - Collector Cutoff (max): 1ВµA Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 1mA, 5V ID_COMPONENTS: 1947868 Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Peak Dc Collector Current: 100 mA Power - Max: 150mW Resistor - Base (r1) (ohms): 100K Transistor Polarity: NPN Transistor Type: NPN - Pre-Biased Typical Input Resistor: 100 KOhm Vce Saturation (max) @ Ib, Ic: 150mV @ 250ВµA, 5mA Voltage - Collector Emitter Breakdown (max): 50V Product Category: Transistors Switching - Resistor Biased RoHS: yes Collector- Emitter Voltage VCEO Max: 50 V Peak DC Collector Current: 100 mA Factory Pack Quantity: 3000 Part # Aliases: PDTC115TE T/R Other Names: 568-2145-2, 934058805115, PDTC115TE T/R