Результаты поиска PDTB113EK,115
Найдено 1 результатов.
- NXP Semiconductors — NXP Semiconductors PDTB113EK,115 Current - Collector (ic) (max): 500mA Current - Collector Cutoff (max): 500nA Dc Current Gain (hfe) (min) @ Ic, Vce: 33 @ 50mA, 5V Mounting Type: Surface Mount Package / Case: SC-59-3, SMT3, SOT-346, TO-236 Power - Max: 250mW Resistor - Base (r1) (ohms): 1K Resistor - Emitter Base (r2) (ohms): 1K Transistor Type: PNP - Pre-Biased Vce Saturation (max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Voltage - Collector Emitter Breakdown (max): 50V Other Names: 934058968115, PDTB113EK T/R