Результаты поиска PDTA115TT,215

Найдено 1 результатов.

• PDTA115TT,215
  NXP Semiconductors — NXP Semiconductors PDTA115TT,215 Collector- Emitter Voltage Vceo Max: 50 V Configuration: Single Current - Collector (ic) (max): 100mA Current - Collector Cutoff (max): 1ВµA Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 1mA, 5V ID_COMPONENTS: 3593257 Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Peak Dc Collector Current: 100 mA Power - Max: 250mW Resistor - Base (r1) (ohms): 100K Transistor Polarity: PNP Transistor Type: PNP - Pre-Biased Typical Input Resistor: 100 KOhms Vce Saturation (max) @ Ib, Ic: 150mV @ 250ВµA, 5mA Voltage - Collector Emitter Breakdown (max): 50V Other Names: 568-2114-2, 934058186215, PDTA115TT T/R