Результаты поиска PDTA115EE,115
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- NXP Semiconductors — NXP Semiconductors PDTA115EE,115 Collector- Emitter Voltage Vceo Max: 50 V Configuration: Single Current - Collector (ic) (max): 20mA Current - Collector Cutoff (max): 1?µA Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 5V Emitter- Base Voltage Vebo: - 10 V ID_COMPONENTS: 1947872 Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Peak Dc Collector Current: 20 mA Power - Max: 150mW Power Dissipation: 150 mW Resistor - Base (r1) (ohms): 100K Resistor - Emitter Base (r2) (ohms): 100K Transistor Polarity: PNP Transistor Type: PNP - Pre-Biased Typical Input Resistor: 100 KOhm Typical Resistor Ratio: 1 Vce Saturation (max) @ Ib, Ic: 150mV @ 250?µA, 5mA Voltage - Collector Emitter Breakdown (max): 50V Product Category: Transistors Switching - Resistor Biased RoHS: yes DC Collector/Base Gain hfe Min: 80 Collector- Emitter Voltage VCEO Max: - 50 V Peak DC Collector Current: - 100 mA Emitter- Base Voltage VEBO: - 10 V Factory Pack Quantity: 3000 Part # Aliases: PDTA115EE T/R Other Names: 568-2106-2, 934058177115, PDTA115EE T/R