Результаты поиска PBSS4230T,215

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• PBSS4230T,215
  NXP Semiconductors — NXP Semiconductors PBSS4230T,215 Collector- Emitter Voltage Vceo Max: 30 V Configuration: Single Continuous Collector Current: 2 A Current - Collector (ic) (max): 2A Current - Collector Cutoff (max): - Dc Collector/base Gain Hfe Min: 300 Dc Current Gain (hfe) (min) @ Ic, Vce: 300 @ 1A, 2V Emitter- Base Voltage Vebo: 5 V Frequency - Transition: 230MHz ID_COMPONENTS: 1949703 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 3 A Maximum Operating Frequency: 230 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SOT-23-3, TO-236-3, Micro3?„?, SSD3, SST3 Power - Max: 480mW Power Dissipation: 300 mW Series: - Transistor Polarity: NPN Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 320mV @ 200mA, 2A Voltage - Collector Emitter Breakdown (max): 30V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 40 V Collector- Emitter Voltage VCEO Max: 30 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 3 A Gain Bandwidth Product fT: 230 MHz DC Collector/Base Gain hfe Min: 300 DC Current Gain hFE Max: 350 at 100 mA at 2 V Maximum Power Dissipation: 300 mW Factory Pack Quantity: 3000 Part # Aliases: PBSS4230T T/R Other Names: 568-4155-2, 934057986215, PBSS4230T T/R