Результаты поиска PBSS4230PANP,115

Найдено 2 результатов.

  • NXP Semiconductors — NXP Semiconductors PBSS4230PANP,115 Collector- Base Voltage Vcbo: 30 V Collector- Emitter Voltage Vceo Max: 30 V Collector-emitter Saturation Voltage: 60 mV, - 75 mV Configuration: Dual Continuous Collector Current: 2 A Dc Collector/base Gain Hfe Min: 250, 260 Dc Current Gain Hfe Max: 380, 370 Emitter- Base Voltage Vebo: 7 V Gain Bandwidth Product Ft: 120 MHz, 95 MHz Maximum Dc Collector Current: 3 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 1450 mW Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: DFN2020-6 Rohs: yes Transistor Polarity: NPN/PNP RoHS: yes Collector- Base Voltage VCBO: 30 V Collector- Emitter Voltage VCEO Max: 30 V Emitter- Base Voltage VEBO: 7 V Collector-Emitter Saturation Voltage: 60 mV, - 75 mV Maximum DC Collector Current: 3 A Gain Bandwidth Product fT: 120 MHz, 95 MHz DC Collector/Base Gain hfe Min: 250, 260 DC Current Gain hFE Max: 380, 370
  • NXP Semiconductors — NXP Semiconductors PBSS4230PANP,115 Collector- Base Voltage Vcbo: 30 V Collector- Emitter Voltage Vceo Max: 30 V Collector-emitter Saturation Voltage: 60 mV, - 75 mV Configuration: Dual Continuous Collector Current: 2 A Dc Collector/base Gain Hfe Min: 250, 260 Dc Current Gain Hfe Max: 380, 370 Emitter- Base Voltage Vebo: 7 V Gain Bandwidth Product Ft: 120 MHz, 95 MHz Maximum Dc Collector Current: 3 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 1450 mW Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: DFN2020-6 Rohs: yes Transistor Polarity: NPN/PNP RoHS: yes Collector- Base Voltage VCBO: 30 V Collector- Emitter Voltage VCEO Max: 30 V Emitter- Base Voltage VEBO: 7 V Collector-Emitter Saturation Voltage: 60 mV, - 75 mV Maximum DC Collector Current: 3 A Gain Bandwidth Product fT: 120 MHz, 95 MHz DC Collector/Base Gain hfe Min: 250, 260 DC Current Gain hFE Max: 380, 370