Результаты поиска PBLS6022D,115
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- NXP Semiconductors — NXP Semiconductors PBLS6022D,115 Collector- Emitter Voltage Vceo Max: - 60 V Configuration: Dual Continuous Collector Current: - 1.5 A Current - Collector (ic) (max): 100mA, 1.5A Current - Collector Cutoff (max): 1?µA, 100nA Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 10mA, 5V / 140 @ 1A, 2V Emitter- Base Voltage Vebo: - 5 V Frequency - Transition: 150MHz ID_COMPONENTS: 1948024 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SC-74-6 Peak Dc Collector Current: - 3 A Power - Max: 760mW Power Dissipation: 370 mW Resistor - Base (r1) (ohms): 4.7K Resistor - Emitter Base (r2) (ohms): 4.7K Series: - Transistor Polarity: PNP Transistor Type: 1 NPN Pre-Biased, 1 PNP Typical Input Resistor: 4.7 KOhms Typical Resistor Ratio: 1 Vce Saturation (max) @ Ib, Ic: 150mV @ 500?µA, 10mA / 260mV @ 100mA, 1.5A Voltage - Collector Emitter Breakdown (max): 50V, 60V Product Category: Transistors Switching - Resistor Biased RoHS: yes DC Collector/Base Gain hfe Min: 285 Collector- Emitter Voltage VCEO Max: - 60 V Peak DC Collector Current: - 3 A Emitter- Base Voltage VEBO: - 5 V Factory Pack Quantity: 3000 Other Names: 934061569115