Результаты поиска PBLS2021D,115
Найдено 1 результатов.
- NXP Semiconductors — NXP Semiconductors PBLS2021D,115 Collector- Emitter Voltage Vceo Max: - 20 V Configuration: Dual Continuous Collector Current: - 1.8 A Current - Collector (ic) (max): 100mA, 1.8A Current - Collector Cutoff (max): 1ВµA, 100nA Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 20mA, 5V / 200 @ 1A, 2V Emitter- Base Voltage Vebo: - 5 V Frequency - Transition: 130MHz ID_COMPONENTS: 1948047 Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SC-74-6 Peak Dc Collector Current: - 3 A Power - Max: 760mW Power Dissipation: 370 mW Resistor - Base (r1) (ohms): 2.2K Resistor - Emitter Base (r2) (ohms): 2.2K Transistor Polarity: PNP Transistor Type: 1 NPN Pre-Biased, 1 PNP Typical Input Resistor: 2.2 KOhms Typical Resistor Ratio: 1 Vce Saturation (max) @ Ib, Ic: 150mV @ 500ВµA, 10mA / 210mV @ 100mA, 1.8A Voltage - Collector Emitter Breakdown (max): 50V, 20V Product Category: Transistors Switching - Resistor Biased RoHS: yes DC Collector/Base Gain hfe Min: 220 Collector- Emitter Voltage VCEO Max: - 20 V Peak DC Collector Current: - 3 A Emitter- Base Voltage VEBO: - 5 V Factory Pack Quantity: 3000 Other Names: 934061573115