Результаты поиска NTTFS4928NTWG
Найдено 2 результатов.
- ON Semiconductor — ON Semiconductor NTTFS4928NTWG Configuration: Single Continuous Drain Current: 11.8 A Current - Continuous Drain (id) @ 25В° C: 7.3A Drain To Source Voltage (vdss): 30V Drain-source Breakdown Voltage: 30 V Fall Time: 4.4 ns Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Forward Transconductance Gfs (max / Min): 40 S Gate Charge (qg) @ Vgs: 8nC @ 4.5V Gate Charge Qg: 8 nC Input Capacitance (ciss) @ Vds: 913pF @ 15V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Mounting Style: SMD/SMT Mounting Type: * Package / Case: * Power - Max: 810mW Power Dissipation: 2.12 W Rds On (max) @ Id, Vgs: 9 mOhm @ 20A, 10V Resistance Drain-source Rds (on): 13.5 mOhms Rise Time: 25.5 ns Series: - Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2.2V @ 250ВµA
- ON Semiconductor — ON Semiconductor NTTFS4928NTWG Configuration: Single Continuous Drain Current: 11.8 A Current - Continuous Drain (id) @ 25В° C: 7.3A Drain To Source Voltage (vdss): 30V Drain-source Breakdown Voltage: 30 V Fall Time: 4.4 ns Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Forward Transconductance Gfs (max / Min): 40 S Gate Charge (qg) @ Vgs: 8nC @ 4.5V Gate Charge Qg: 8 nC Input Capacitance (ciss) @ Vds: 913pF @ 15V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Mounting Style: SMD/SMT Mounting Type: * Package / Case: * Power - Max: 810mW Power Dissipation: 2.12 W Rds On (max) @ Id, Vgs: 9 mOhm @ 20A, 10V Resistance Drain-source Rds (on): 13.5 mOhms Rise Time: 25.5 ns Series: - Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2.2V @ 250ВµA