Результаты поиска NTMFS4925NT1G

Найдено 2 результатов.

• NTMFS4925NT1G
  ON Semiconductor — ON Semiconductor NTMFS4925NT1G Configuration: Single Continuous Drain Current: 16.7 A Current - Continuous Drain (id) @ 25В° C: 9.7A Drain To Source Voltage (vdss): 30V Drain-source Breakdown Voltage: 30 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Forward Transconductance Gfs (max / Min): 52 s Gate Charge (qg) @ Vgs: 10.8nC @ 4.5V Gate Charge Qg: 10.8 nC Input Capacitance (ciss) @ Vds: 1264pF @ 15V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: 5-TDFN Power - Max: 920mW Power Dissipation: 0.92 W, 2.7 W, 6.16 W, 23.2 W Rds On (max) @ Id, Vgs: 6 mOhm @ 30A, 10V Resistance Drain-source Rds (on): 10 mOhms Series: - Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2.2V @ 250ВµA
• NTMFS4925NT1G
  ON Semiconductor — ON Semiconductor NTMFS4925NT1G Configuration: Single Continuous Drain Current: 16.7 A Current - Continuous Drain (id) @ 25В° C: 9.7A Drain To Source Voltage (vdss): 30V Drain-source Breakdown Voltage: 30 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Forward Transconductance Gfs (max / Min): 52 s Gate Charge (qg) @ Vgs: 10.8nC @ 4.5V Gate Charge Qg: 10.8 nC Input Capacitance (ciss) @ Vds: 1264pF @ 15V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: 5-TDFN Power - Max: 920mW Power Dissipation: 0.92 W, 2.7 W, 6.16 W, 23.2 W Rds On (max) @ Id, Vgs: 6 mOhm @ 30A, 10V Resistance Drain-source Rds (on): 10 mOhms Series: - Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2.2V @ 250ВµA