Результаты поиска NTD4970NT4G

Найдено 2 результатов.

• NTD4970NT4G
  ON Semiconductor — ON Semiconductor NTD4970NT4G Configuration: Single Continuous Drain Current: 11.6 A Current - Continuous Drain (id) @ 25В° C: 8.5A Drain To Source Voltage (vdss): 30V Drain-source Breakdown Voltage: 30 V Fall Time: 5.7 ns Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Forward Transconductance Gfs (max / Min): 34 S Gate Charge (qg) @ Vgs: 8.2nC @ 4.5V Gate Charge Qg: 8.2 nC Input Capacitance (ciss) @ Vds: 774pF @ 15V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Mounting Style: SMD/SMT Mounting Type: * Package / Case: * Power - Max: 1.38W Power Dissipation: 2.55 W Rds On (max) @ Id, Vgs: 11 mOhm @ 30A, 10V Resistance Drain-source Rds (on): 21 mOhms Rise Time: 27.6 ns Series: - Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2.5V @ 250ВµA
• NTD4970NT4G
  ON Semiconductor — ON Semiconductor NTD4970NT4G Configuration: Single Continuous Drain Current: 11.6 A Current - Continuous Drain (id) @ 25В° C: 8.5A Drain To Source Voltage (vdss): 30V Drain-source Breakdown Voltage: 30 V Fall Time: 5.7 ns Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Forward Transconductance Gfs (max / Min): 34 S Gate Charge (qg) @ Vgs: 8.2nC @ 4.5V Gate Charge Qg: 8.2 nC Input Capacitance (ciss) @ Vds: 774pF @ 15V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Mounting Style: SMD/SMT Mounting Type: * Package / Case: * Power - Max: 1.38W Power Dissipation: 2.55 W Rds On (max) @ Id, Vgs: 11 mOhm @ 30A, 10V Resistance Drain-source Rds (on): 21 mOhms Rise Time: 27.6 ns Series: - Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2.5V @ 250ВµA