Результаты поиска NTD4969NT4G

Найдено 2 результатов.

• NTD4969NT4G
  ON Semiconductor — ON Semiconductor NTD4969NT4G Configuration: Single Continuous Drain Current: 12.7 A Current - Continuous Drain (id) @ 25В° C: 9.4A Drain To Source Voltage (vdss): 30V Drain-source Breakdown Voltage: 30 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Forward Transconductance Gfs (max / Min): 36 s Gate Charge (qg) @ Vgs: 9nC @ 4.5V Gate Charge Qg: 9 nC Input Capacitance (ciss) @ Vds: 837pF @ 15V Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Power - Max: 1.38W Power Dissipation: 1.38 W, 2.56 W, 26.3 W Rds On (max) @ Id, Vgs: 9 mOhm @ 30A, 10V Resistance Drain-source Rds (on): 19 mOhms Series: - Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2.5V @ 250ВµA
• NTD4969NT4G
  ON Semiconductor — ON Semiconductor NTD4969NT4G Configuration: Single Continuous Drain Current: 12.7 A Current - Continuous Drain (id) @ 25В° C: 9.4A Drain To Source Voltage (vdss): 30V Drain-source Breakdown Voltage: 30 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Forward Transconductance Gfs (max / Min): 36 s Gate Charge (qg) @ Vgs: 9nC @ 4.5V Gate Charge Qg: 9 nC Input Capacitance (ciss) @ Vds: 837pF @ 15V Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Power - Max: 1.38W Power Dissipation: 1.38 W, 2.56 W, 26.3 W Rds On (max) @ Id, Vgs: 9 mOhm @ 30A, 10V Resistance Drain-source Rds (on): 19 mOhms Series: - Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2.5V @ 250ВµA